BSC020N03MSGATMA1
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Описание
Электроэлемент
Single N-Channel 30 V 2.5 mOhm 124 nC OptiMOS? Power Mosfet - TDSON-8
Технические параметры
| Brand | Infineon Technologies |
| Channel Mode | Enhancement |
| Configuration | 1 N-Channel |
| Factory Pack Quantity | 5000 |
| Fall Time | 14 ns |
| Forward Transconductance - Min | 60 S |
| Height | 1.27 mm |
| Id - Continuous Drain Current | 100 A |
| Length | 5.9 mm |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TDSON-8 |
| Packaging | Reel |
| Part # Aliases | BSC020N03MS BSC020N03MSGXT G SP000311503 |
| Pd - Power Dissipation | 96 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 60 nC |
| Rds On - Drain-Source Resistance | 1.7 mOhms |
| Rise Time | 14 ns |
| RoHS | Details |
| Series | BSC020N03 |
| Technology | Si |
| Tradename | OptiMOS |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 36 ns |
| Typical Turn-On Delay Time | 27 ns |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Width | 5.15 mm |
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 5000 |
| Fall Time: | 14 ns |
| Forward Transconductance - Min: | 60 S |
| Id - Continuous Drain Current: | 100 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | TDSON-8 |
| Part # Aliases: | BSC020N03MS G SP000311503 |
| Pd - Power Dissipation: | 96 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 60 nC |
| Rds On - Drain-Source Resistance: | 1.7 mOhms |
| Rise Time: | 14 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 36 ns |
| Typical Turn-On Delay Time: | 27 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
Техническая документация
Datasheet
pdf, 1041 КБ
Документация
pdf, 1093 КБ
Трёхмерное изображение изделия
zip, 522 КБ
Трёхмерное изображение изделия
zip, 11 КБ
