2N7000TA, MOSFET 60V N-Channel Sm Sig

Изображения служат только для ознакомления,
см. техническую документацию

110 руб.

от 10 шт. — 83 руб.

от 100 шт. — 44 руб.

от 1000 шт. — 28.90 руб.

Добавить в корзину 1 шт. на сумму 110 руб.

Номенклатурный номер: 8004584380

Артикул: 2N7000TA

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology.

Base Part Number	2N7000
Current - Continuous Drain (Id) @ 25В°C	200mA(Tc)
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 25V
Manufacturer	ON Semiconductor
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 150В°C(TJ)
Package / Case	TO-226-3, TO-92-3(TO-226AA)(Formed Leads)
Packaging	Tape & Box(TB)
Part Status	Active
Power Dissipation (Max)	400mW(Ta)
Rds On (Max) @ Id, Vgs	5Ohm @ 500mA, 10V
Series	-
Supplier Device Package	TO-92-3
Technology	MOSFET(Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	3V @ 1mA
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	200 mA
Maximum Drain Source Resistance	5 Ω
Maximum Drain Source Voltage	60 V
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	400 mW
Minimum Gate Threshold Voltage	0.3V
Minimum Operating Temperature	-55 °C
Number of Elements per Chip	1
Package Type	TO-92
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Width	4.19mm
Вес, г	0.45