ZTX657, Bipolar Transistors - BJT NPN Super E-Line

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190 руб.

от 10 шт. — 160 руб.

от 100 шт. — 118 руб.

от 500 шт. — 93.22 руб.

Добавить в корзину 1 шт. на сумму 190 руб.

Номенклатурный номер: 8004841853

Артикул: ZTX657

Бренд: DIODES INC.

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

500 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

Brand:	Diodes Incorporated
Collector- Base Voltage VCBO:	300 V
Collector- Emitter Voltage VCEO Max:	300 V
Collector-Emitter Saturation Voltage:	500 mV
Configuration:	Single
Continuous Collector Current:	500 mA
DC Collector/Base Gain hfe Min:	50 at 100 mA, 5 V, 40 at 10 mA, 5 V
DC Current Gain hFE Max:	50 at 100 mA, 5 V
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity: Factory Pack Quantity:	4000
Gain Bandwidth Product fT:	30 MHz
Manufacturer:	Diodes Incorporated
Maximum DC Collector Current:	500 mA
Maximum Operating Temperature:	+200 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Package / Case:	TO-92-3
Packaging:	Bulk
Pd - Power Dissipation:	1 W
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Series:	ZTX657
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
Automotive	Yes
Configuration	Single
Maximum Collector Base Voltage - (V)	300
Maximum Collector-Emitter Voltage - (V)	300
Maximum DC Collector Current - (A)	0.5
Maximum Emitter Base Voltage - (V)	5
Maximum Power Dissipation - (mW)	1000
Maximum Transition Frequency - (MHz)	30(Min)
Military Qualified	No
Minimum DC Current Gain	40@10mA@5VI50@100mA@5V
Number of Elements per Chip	1
Operating Temperature - (?C)	-55~200
Pin Count	3
Standard Package Name	TO-92
Supplier Package	E-Line
Вес, г	0.4536