ZTX457, Bipolar Transistors - BJT NPN High Voltage

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180 руб.

от 10 шт. — 160 руб.

от 100 шт. — 98 руб.

от 500 шт. — 79.03 руб.

Добавить в корзину 1 шт. на сумму 180 руб.

Номенклатурный номер: 8004841831

Артикул: ZTX457

Бренд: DIODES INC.

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Brand:	Diodes Incorporated
Collector- Base Voltage VCBO:	300 V
Collector- Emitter Voltage VCEO Max:	300 V
Collector-Emitter Saturation Voltage:	300 mV
Configuration:	Single
Continuous Collector Current:	500 mA
DC Current Gain hFE Max:	50 at 10 mA, 10 V
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity: Factory Pack Quantity:	4000
Gain Bandwidth Product fT:	75 MHz
Manufacturer:	Diodes Incorporated
Maximum DC Collector Current:	500 mA
Maximum Operating Temperature:	+200 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Package / Case:	TO-92-3
Packaging:	Bulk
Pd - Power Dissipation:	1 W
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Series:	ZTX457
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
Maximum Collector Base Voltage	300 V
Maximum Collector Emitter Voltage	300 V
Maximum DC Collector Current	500 mA
Maximum Emitter Base Voltage	5 V
Maximum Operating Frequency	20 MHz
Maximum Operating Temperature	+200 °C
Maximum Power Dissipation	1 W
Minimum DC Current Gain	50
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	TO-92
Pin Count	3
Transistor Configuration	Single
Transistor Type	NPN
Вес, г	0.4536