C3M0030090K, MOSFET G3 SiC MOSFET 900V, 30mOhm
см. техническую документацию
Описание
The C3M0030090K is a silicon carbide power MOSFET using C3M MOSFET technology in 4 pin TO-247 package. It features 900V drain to source voltage and 63A continuous drain current at VGS = 15V, TC = 25˚C. Typical applications include solar inverters, EV battery chargers, High voltage DC/DC converters and switch mode power supplies.
• Optimized package with separate driver source pin
• 8mm of creepage distance between drain and source
• High blocking voltage with low on-resistance
• High-speed switching with low capacitances
• Fast intrinsic diode with low reverse recovery (Qrr)
• Reduce switching losses and minimize gate ringing
• Higher system efficiency Reduce cooling requirements
• Increased power density and system switching frequency
• Operating junction and storage temperature from -55 to +150˚C
Технические параметры
| Channel Type | N Channel |
| Drain Source On State Resistance | 0.03Ом |
| Power Dissipation | 149Вт |
| Количество Выводов | 4вывод(-ов) |
| Конфигурация МОП-транзистора | Single |
| Линейка Продукции | C3M |
| Максимальная Рабочая Температура | 150 C |
| Напряжение Измерения Rds(on) | 15В |
| Напряжение Истока-стока Vds | 900В |
| Непрерывный Ток Стока | 63А |
| Полярность Транзистора | N Канал |
| Пороговое Напряжение Vgs | 2.4В |
| Рассеиваемая Мощность | 149Вт |
| Сопротивление во Включенном Состоянии Rds(on) | 0.03Ом |
| Стиль Корпуса Транзистора | TO-247 |
| Channel Mode | Enhancement |
| Maximum Continuous Drain Current | 63 A |
| Maximum Drain Source Resistance | 30 mΩ |
| Maximum Drain Source Voltage | 900 V |
| Maximum Gate Source Voltage | -8 V, 19 V |
| Maximum Gate Threshold Voltage | 3.5V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 149 W |
| Minimum Gate Threshold Voltage | 1.7V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-247-4 |
| Pin Count | 4 |
| Transistor Configuration | Single |
| Transistor Material | SiC |
| Typical Gate Charge @ Vgs | 87 nC @ 4/15V |
| Width | 5.21mm |
Техническая документация
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