XP231P02013R-G
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см. техническую документацию
3000 шт., срок 7-9 недель
110 руб.
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Описание
XP2x-G MOSFETs
Torex Semiconductor XP2x-G MOSFETs are general-purpose MOSFETs with low on-resistance and high-speed switching. These MOSFETs include a built-in gate protection diode for static protection. The XP2x-G MOSFETs operate at 150°C junction temperature and stored at -55°C to 150°C temperature range. These MOSFETs are environmentally-friendly products that comply with the EU RoHS directive and are lead-free. The XP2x-G MOSFETs are available in space-saving compact SOT-323 packages. These MOSFETs are ideal for use in various applications such as relay circuits and switching circuits.
Torex Semiconductor XP2x-G MOSFETs are general-purpose MOSFETs with low on-resistance and high-speed switching. These MOSFETs include a built-in gate protection diode for static protection. The XP2x-G MOSFETs operate at 150°C junction temperature and stored at -55°C to 150°C temperature range. These MOSFETs are environmentally-friendly products that comply with the EU RoHS directive and are lead-free. The XP2x-G MOSFETs are available in space-saving compact SOT-323 packages. These MOSFETs are ideal for use in various applications such as relay circuits and switching circuits.
Технические параметры
| Brand: | Torex Semiconductor |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 45 ns |
| Id - Continuous Drain Current: | 200 mA |
| Manufacturer: | Torex Semiconductor |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOT-323-3A |
| Pd - Power Dissipation: | 350 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Rds On - Drain-Source Resistance: | 5 Ohms |
| Rise Time: | 20 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 80 ns |
| Typical Turn-On Delay Time: | 18 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Vgs th - Gate-Source Threshold Voltage: | 500 mV |
| Channel Type | P Channel |
| Drain Source On State Resistance | 3.2Ом |
| Power Dissipation | 350мВт |
| Количество Выводов | 3вывод(-ов) |
| Линейка Продукции | XP231P0201xx-G |
| Максимальная Рабочая Температура | 150°C |
| Монтаж транзистора | Surface Mount |
| Напряжение Измерения Rds(on) | 4.5В |
| Напряжение Истока-стока Vds | 30В |
| Непрерывный Ток Стока | 200мА |
| Полярность Транзистора | P Канал |
| Пороговое Напряжение Vgs | 800мВ |
| Рассеиваемая Мощность | 350мВт |
| Сопротивление во Включенном Состоянии Rds(on) | 3.2Ом |
| Стиль Корпуса Транзистора | SOT-323-3A |
| Уровень Чувствительности к Влажности (MSL) | MSL 1-Безлимитный |
Техническая документация
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