C3M0021120K, MOSFET 1.2kV 21mOHMS G3 SiC MOSFET
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Описание
The Wolfspeed Silicon Carbide Power MOSFET C3MTM MOSFET Technology is in N-Channel Enhancement Mode. The Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs is a range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency.
Технические параметры
| Automotive | Unknown |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Dual Source |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Through Hole |
| Material | SiC |
| Maximum Continuous Drain Current (A) | 100 |
| Maximum Drain Source Resistance (mOhm) | 28.8@15V |
| Maximum Drain Source Voltage (V) | 1200 |
| Maximum Gate Source Voltage (V) | 19 |
| Maximum Operating Temperature (°C) | 175 |
| Maximum Power Dissipation (mW) | 469000 |
| Minimum Operating Temperature (°C) | -40 |
| Mounting | Through Hole |
| Number of Elements per Chip | 1 |
| Part Status | Active |
| PCB changed | 4 |
| Pin Count | 4 |
| PPAP | Unknown |
| Product Category | Power MOSFET |
| Standard Package Name | TO |
| Supplier Package | TO-247 |
| Tab | Tab |
| Typical Fall Time (ns) | 14 |
| Typical Gate Charge @ Vgs (nC) | 162@15V |
| Typical Input Capacitance @ Vds (pF) | 4818@1000V |
| Typical Rise Time (ns) | 33 |
| Typical Turn-Off Delay Time (ns) | 57 |
| Typical Turn-On Delay Time (ns) | 29 |
| Maximum Continuous Drain Current | 100 A |
| Maximum Drain Source Voltage | 1200 V |
| Mounting Type | Through Hole |
| Package Type | TO 247 |
| Вес, г | 6 |
Техническая документация
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