GC50MPS33H
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Номенклатурный номер: 8008704686
Бренд: GENESIC SEMICONDUCTOR
Описание
3300V SiC MOSFETs
GeneSiC Semiconductor 3300V SiC MOSFETs offer fast and efficient switching with reduced ringing in an optimized package with a separate driver source pin. The 3300V SiC MOSFETs are designed to be compatible with commercial gate drivers and provide ease of paralleling without a thermal runaway. The 3300V SiC MOSFETs deliver low conduction losses at all temperatures, allowing superior robustness and system reliability.
GeneSiC Semiconductor 3300V SiC MOSFETs offer fast and efficient switching with reduced ringing in an optimized package with a separate driver source pin. The 3300V SiC MOSFETs are designed to be compatible with commercial gate drivers and provide ease of paralleling without a thermal runaway. The 3300V SiC MOSFETs deliver low conduction losses at all temperatures, allowing superior robustness and system reliability.
Технические параметры
| Brand: | GeneSiC Semiconductor |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |
| If - Forward Current: | 50 A |
| Manufacturer: | GeneSiC Semiconductor |
| Maximum Operating Temperature: | +175 C |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-2 |
| Packaging: | Tube |
| Product Category: | Schottky Diodes & Rectifiers |
| Product Type: | Schottky Diodes & Rectifiers |
| Product: | Schottky Silicon Carbide Diodes |
| Series: | SiC Schottky MPS |
| Subcategory: | Diodes & Rectifiers |
| Technology: | SiC |
| Type: | Schottky Silicon Carbide Diodes |
| Vrrm - Repetitive Reverse Voltage: | 3.3 kV |
| Вес, г | 6 |
Техническая документация
Datasheet
pdf, 662 КБ
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