TSM8588CS RLG
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
2144 шт., срок 6-8 недель
190 руб.
от 10 шт. —
170 руб.
от 100 шт. —
101 руб.
от 500 шт. —
81.16 руб.
Добавить в корзину 1 шт.
на сумму 190 руб.
Альтернативные предложения1
Описание
TSM N- & P-Channel MOSFETs Taiwan Semiconductor TSM N- and P-Channel MOSFETs are RoHS compliant with low gate charges for fast power switching. These MOSFETs are halogen-free and 100% UIS- and Rg tested. The TSM N- and P-channel MOSFETs operate at -55°C to 150°C junction temperature range. These MOSFETs are ideally used in load switch power management, portable devices, DC-DC converters, and power routing.
Технические параметры
| Brand: | Taiwan Semiconductor |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: | 2500 |
| Forward Transconductance - Min: | 5 S |
| Id - Continuous Drain Current: | 5 A |
| Manufacturer: | Taiwan Semiconductor |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package/Case: | SOP-8 |
| Packaging: | Reel, Cut Tape |
| Part # Aliases: | TSM8588CS |
| Pd - Power Dissipation: | 5.7 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 9 nC, 9.4 nC |
| Rds On - Drain-Source Resistance: | 103 mOhms, 180 mOhms |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel, P-Channel |
| Transistor Type: | 1 N-Channel, 1 P-Channel |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V, 1 V |
Техническая документация
Datasheet
pdf, 463 КБ
Сроки доставки
Выберите регион, чтобы увидеть способы получения товара.
