GP2S60B
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см. техническую документацию
см. техническую документацию
90 шт., срок 7-9 недель
34 руб.
Мин. кол-во для заказа 10 шт.
Добавить в корзину 10 шт.
на сумму 340 руб.
Альтернативные предложения2
Описание
GP2S60 is a compact-package, phototransistor output, reflective photointerrupter, with emitter and detector facing the same direction in a molding that provides noncontact sensing.
Технические параметры
| Brand | Sharp Microelectronics |
| Collector- Emitter Voltage VCEO Max | 35 V |
| Factory Pack Quantity | 10000 |
| Fall Time | 20 us |
| If - Forward Current | 20 mA |
| Manufacturer | Sharp Microelectronics |
| Maximum Collector Current | 20 mA |
| Maximum Operating Temperature | +85 C |
| Minimum Operating Temperature | -25 C |
| Moisture Sensitive | Yes |
| Mounting Style | SMD/SMT |
| Number Of Channels | 1 Channel |
| Output Type | Phototransistor |
| Package / Case | SMD-4 |
| Packaging | Cut Tape or Reel |
| Pd - Power Dissipation | 100 mW |
| Rise Time | 20 us |
| Sensing Distance | 0.5 mm |
| Sensing Method | Reflective |
| Subcategory | Optical Switches |
| Vf - Forward Voltage | 1.2 V |
| Vr - Reverse Voltage | 6 V |
| Wavelength | 950 nm |
| Brand: | Sharp Microelectronics |
| Collector- Emitter Voltage VCEO Max: | 35 V |
| Factory Pack Quantity: Factory Pack Quantity: | 10000 |
| Fall Time: | 20 us |
| If - Forward Current: | 20 mA |
| Manufacturer: | Sharp Microelectronics |
| Maximum Collector Current: | 20 mA |
| Maximum Operating Temperature: | +85 C |
| Minimum Operating Temperature: | -25 C |
| Moisture Sensitive: | Yes |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Output Type: | Phototransistor |
| Package / Case: | SMD-4 |
| Pd - Power Dissipation: | 100 mW |
| Rise Time: | 20 us |
| Sensing Distance: | 0.5 mm |
| Sensing Method: | Reflective |
| Subcategory: | Optical Switches |
| Vf - Forward Voltage: | 1.2 V |
| Vr - Reverse Voltage: | 6 V |
| Wavelength: | 950 nm |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -25 →+85°C |
| Output Device | Phototransistor |
| Package Type | SMD |
| Peak Sensor Distance | 0.5mm |
| Typical Fall Time | 20µs |
| Typical Rise Time | 20µs |
| Width | 1.7mm |
Техническая документация
Datasheet GP2S60A
pdf, 2135 КБ
Datasheet GP2S60B
pdf, 607 КБ
Сроки доставки
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