AON7508, Транзистор МОП n-канальный, полевой, 30В, 25А, 25Вт, DFN-8
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см. техническую документацию
см. техническую документацию
160 руб.
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96 руб.
от 30 шт. —
80 руб.
от 100 шт. —
66.49 руб.
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Описание
Trans MOSFET N-CH 30V 32A 8-Pin DFN-A EP T/R
Технические параметры
| Automotive | Unknown |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Maximum Continuous Drain Current (A) | 32 |
| Maximum Drain Source Resistance (mOhm) | 3 10V |
| Maximum Drain Source Voltage (V) | 30 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 2.2 |
| Maximum IDSS (uA) | 1 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 62500 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 8 |
| Pin Count | 8 |
| PPAP | Unknown |
| Process Technology | AlphaMOS |
| Product Category | Power MOSFET |
| Supplier Package | DFN-A EP |
| Typical Fall Time (ns) | 6.5 |
| Typical Gate Charge @ 10V (nC) | 29 |
| Typical Gate Charge @ Vgs (nC) | 29 10V|13.6 4.5V |
| Typical Input Capacitance @ Vds (pF) | 1835 15V |
| Typical Rise Time (ns) | 4 |
| Typical Turn-Off Delay Time (ns) | 27.3 |
| Typical Turn-On Delay Time (ns) | 7.9 |
| Вес, г | 0.21 |
Техническая документация
Datasheet
pdf, 344 КБ
