C2M0040120D, Транзистор полевой MOSFET N-канальный на основе карбида кремния 1200В 60A 3-Pin(3+Tab) TO-247
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26 шт. со склада г.Москва, срок 10 дней
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Описание
Транзисторы / Полевые транзисторы / Транзисторы на основе карбида кремния (SIC)
Транзистор полевой MOSFET N-канальный на основе карбида кремния 1200В 60A 3-Pin(3+Tab) TO-247
Технические параметры
| корпус | TO-247 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Forward Diode Voltage | 3.3V |
| Maximum Continuous Drain Current | 60 A |
| Maximum Drain Source Resistance | 52 mΩ |
| Maximum Drain Source Voltage | 1200 V |
| Maximum Gate Source Voltage | -5 V, +20 V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 330 W |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-247 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | SiC |
| Typical Gate Charge @ Vgs | 115 nC @ 20 V, 115 nC @ 5 V |
| Width | 5.21mm |
| Brand: | Wolfspeed |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |
| Fall Time: | 34.4 ns |
| Forward Transconductance - Min: | 13.2 S |
| Id - Continuous Drain Current: | 60 A |
| Manufacturer: | Wolfspeed |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-247-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 330 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | Power MOSFETs |
| Qg - Gate Charge: | 115 nC |
| Rds On - Drain-Source Resistance: | 40 mOhms |
| Rise Time: | 52 ns |
| Subcategory: | MOSFETs |
| Technology: | SiC |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | Silicon Carbide Power MOSFET |
| Typical Turn-Off Delay Time: | 26.4 ns |
| Typical Turn-On Delay Time: | 14.8 ns |
| Vds - Drain-Source Breakdown Voltage: | 1.2 kV |
| Vgs - Gate-Source Voltage: | -5 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Automotive | No |
| Configuration | Single |
| ECCN (US) | EAR99 |
| Material | SiC |
| Maximum Continuous Drain Current (A) | 55 |
| Maximum Drain Source Resistance (mOhm) | 52@20V |
| Maximum Drain Source Voltage (V) | 1200 |
| Maximum Gate Source Leakage Current (nA) | 250 |
| Maximum Gate Source Voltage (V) | 25 |
| Maximum Gate Threshold Voltage (V) | 2.8(Typ) |
| Maximum IDSS (uA) | 100 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 330000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Through Hole |
| Packaging | Tube |
| Part Status | Active |
| PCB changed | 3 |
| PPAP | No |
| Process Technology | C2M |
| Product Category | Power MOSFET |
| Standard Package Name | TO |
| Supplier Package | TO-247 |
| Supplier Temperature Grade | Industrial |
| Tab | Tab |
| Typical Fall Time (ns) | 34 |
| Typical Gate Charge @ Vgs (nC) | 115@20V |
| Typical Input Capacitance @ Vds (pF) | 1893@1000V |
| Typical Rise Time (ns) | 52 |
| Typical Turn-Off Delay Time (ns) | 26 |
| Typical Turn-On Delay Time (ns) | 15 |
| Вес, г | 8.1 |
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