МОП-транзистор LINEAR L2 SERIES МОП-транзистор 200V 110A
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
9 030 руб.
Добавить в корзину 1 шт.
на сумму 9 030 руб.
Описание
Linear Power MOSFETs with Extended FBSOA
IXYS Linear Power MOSFETs with Extended FBSOA are N-Channel enhancement mode power MOSFETs designed for linear operation in an international standard package. IXYS Linear Power MOSFETs with Extended FBSOA feature a miniBLOC with aluminium nitride isolation, high power density, a space-saving and easy-to-mount package, and molding epoxy which meets the UL94 V-0 flammability classification.
IXYS Linear Power MOSFETs with Extended FBSOA are N-Channel enhancement mode power MOSFETs designed for linear operation in an international standard package. IXYS Linear Power MOSFETs with Extended FBSOA feature a miniBLOC with aluminium nitride isolation, high power density, a space-saving and easy-to-mount package, and molding epoxy which meets the UL94 V-0 flammability classification.
Технические параметры
Brand: | IXYS |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 25 |
Fall Time: | 135 ns |
Forward Transconductance - Min: | 55 S |
Id - Continuous Drain Current: | 110 A |
Manufacturer: | IXYS |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package/Case: | TO-264-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 960 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 500 nC |
Rds On - Drain-Source Resistance: | 24 mOhms |
Rise Time: | 100 ns |
Series: | IXTK110N20 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | Linear L2 |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Type: | LinearL2 Power MOSFET |
Typical Turn-Off Delay Time: | 33 ns |
Typical Turn-On Delay Time: | 40 ns |
Vds - Drain-Source Breakdown Voltage: | 200 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 4.5 V |
Вес, г | 10 |
Техническая документация
Datasheet
pdf, 157 КБ