DN3145N8-G
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450 руб.
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Описание
Электроэлемент
3 SOT-89 T/RMOSFET, DEPLETION-MODE, 450V, 60 Ohm | Microchip Technology Inc. DN3145N8-G
Технические параметры
| Automotive | No |
| Channel Mode | Depletion |
| Channel Type | N |
| Configuration | Single |
| Maximum Continuous Drain Current - (A) | 0.1 |
| Maximum Drain Source Resistance - (mOhm) | 60000@0V |
| Maximum Drain Source Voltage - (V) | 450 |
| Maximum Gate Source Voltage - (V) | ??20 |
| Maximum Power Dissipation - (mW) | 1300 |
| Military | No |
| Number of Elements per Chip | 1 |
| Operating Temperature - (??C) | -55~150 |
| Packaging | Tape and Reel |
| Pin Count | 4 |
| Supplier Package | SOT-89 |
| Typical Input Capacitance @ Vds - (pF) | 120(Max)@25V |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Maximum Continuous Drain Current (A) | 0.1 |
| Maximum Drain Source Resistance (mOhm) | 60000@0V |
| Maximum Drain Source Voltage (V) | 450 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 1300 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Part Status | Active |
| PCB changed | 3 |
| PPAP | No |
| Process Technology | DMOS |
| Product Category | Power MOSFET |
| Tab | Tab |
| Typical Fall Time (ns) | 35(Max) |
| Typical Input Capacitance @ Vds (pF) | 120(Max)@25V |
| Typical Rise Time (ns) | 15(Max) |
| Typical Turn-Off Delay Time (ns) | 20(Max) |
| Typical Turn-On Delay Time (ns) | 10(Max) |
