The IRF7314TRPBF is a dual P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
• Generation V technology
• Ultra low ON-resistance
• Surface-mount device
• Fully avalanche rated
Транзисторы / Полевые / Сборки MOSFET транзисторов
Корпус: SO8, инфо: MOSFET P-канал 20В/ 5.3А/2Вт/0.058 Ом Упр.лог.уровнем Сдвоенные