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Insulated-Gate Field-Effect Transistor

Published 10.11.2010 Presenter Anton Pankratov

Insulated-Gate Field-Effect Transistor

In insulated-gate field-effect transistors the metallic gate is separated from the semiconductor channel with a thin layer of dielectric. These devices are also often referred to as MDS or MOS-transistors (stands for metal-oxide-semiconductor).
The base of such devices is a silicon plate with p type electroconductivitity ...