1MBI600V-120-50, 1 Pack IGBT V-series, 600

PartNumber: 1MBI600V-120-50
Ном. номер: 8015649601
Производитель: Fuji Electric
1MBI600V-120-50, 1 Pack IGBT V-series, 600
Доступно на заказ 1 шт. Отгрузка со склада в г.Москва 4-5 недель.
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Описание

IGBT Modules 1-Pack, Fuji Electric

IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Semiconductors

Технические параметры

Channel Type
N
конфигурация
Dual Emitter, Single
Dimensions
108 x 62 x 36mm
Maximum Collector Emitter Voltage
1200 V
Maximum Continuous Collector Current
720 A
Maximum Gate Emitter Voltage
±20V
Maximum Operating Temperature
+150 °C
Максимальная рассеиваемая мощность
3000 W
Package Type
M153
Pin Count
4
Width
62mm
высота
36mm
длина
108mm
тип монтажа
Screw Mount

Дополнительная информация

Datasheet 1MBI600V-120-50