2N4401TFR, Биполярный транзистор, NPN, 40 В, 600 мА, 625 мВт, TO-92, Through Hole
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83 руб.
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Описание
Полупроводники - Дискретные\Транзисторы\Биполярные Транзисторы\Биполярные Одиночные Массивы Транзисторов - BJT
The NPN Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.
Технические параметры
| Maximum Collector Emitter Voltage | 40 V |
| Maximum DC Collector Current | 600 mA |
| Maximum Emitter Base Voltage | 6 V dc |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 1.5 W |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-92 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Type | NPN |
| Brand: | onsemi/Fairchild |
| Collector- Base Voltage VCBO: | 60 V |
| Collector- Emitter Voltage VCEO Max: | 40 V |
| Collector-Emitter Saturation Voltage: | 750 mV |
| Configuration: | Single |
| Continuous Collector Current: | 600 mA |
| DC Current Gain hFE Max: | 300 |
| Emitter- Base Voltage VEBO: | 6 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2000 |
| Gain Bandwidth Product fT: | 250 MHz |
| Manufacturer: | onsemi |
| Maximum DC Collector Current: | 600 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Package / Case: | TO-92-3 Kinked Lead |
| Packaging: | Reel, Cut Tape |
| Part # Aliases: | 2N4401TFR_NL |
| Pd - Power Dissipation: | 625 mW |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | 2N4401 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | NPN |
| Base Part Number | 2N4401 |
| Current - Collector (Ic) (Max) | 600mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 1V |
| Frequency - Transition | 250MHz |
| Manufacturer | ON Semiconductor |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | TO-226-3, TO-92-3(TO-226AA)(Formed Leads) |
| Packaging | Cut Tape(CT) |
| Part Status | Active |
| Power - Max | 625mW |
| Series | - |
| Supplier Device Package | TO-92-3 |
| Vce Saturation (Max) @ Ib, Ic | 750mV @ 50mA, 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 40V |
| Вес, г | 0.406 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные (BJTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
