2N7002W-7-F, Силовой МОП-транзистор, N Канал, 60 В, 115 мА, 13.5 Ом, SOT-323, Surface Mount
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Описание
Описание Транзистор N-MOSFET, полевой, 60В, 0,073А, 0,2Вт, SOT323 Характеристики
Категория | Транзистор |
Тип | полевой |
Вид | MOSFET |
Технические параметры
EU RoHS | Compliant |
ECCN (US) | EAR99 |
Part Status | Active |
HTS | 8541.29.00.95 |
Product Category | Small Signal |
Configuration | Single |
Channel Mode | Enhancement |
Channel Type | N |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 60 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Continuous Drain Current (A) | 0.115 |
Maximum Drain Source Resistance (mOhm) | 7500@5V |
Typical Input Capacitance @ Vds (pF) | 22@25V |
Maximum Power Dissipation (mW) | 200 |
Typical Turn-Off Delay Time (ns) | 11 |
Typical Turn-On Delay Time (ns) | 7 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Packaging | Tape and Reel |
Automotive | No |
Standard Package Name | SOT |
Pin Count | 3 |
Supplier Package | SOT-323 |
Military | No |
Mounting | Surface Mount |
Package Height | 0.95 |
Package Length | 2.15 |
Package Width | 1.3 |
PCB changed | 3 |
Lead Shape | Gull-wing |
Continuous Drain Current (Id) @ 25В°C | 115mA |
Power Dissipation-Max (Ta=25В°C) | 200mW |
Rds On - Drain-Source Resistance | 7.5О© @ 50mA,5V |
Transistor Polarity | N Channel |
Vds - Drain-Source Breakdown Voltage | 60V |
Vgs - Gate-Source Voltage | 2V @ 250uA |
Brand: | Diodes Incorporated |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Forward Transconductance - Min: | 80 mS |
Id - Continuous Drain Current: | 115 mA |
Manufacturer: | Diodes Incorporated |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | SOT-323-3 |
Pd - Power Dissipation: | 200 mW |
Product Category: | MOSFET |
Product Type: | MOSFET |
Product: | MOSFET Small Signal |
Rds On - Drain-Source Resistance: | 13.5 Ohms |
Series: | 2N7002W |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Type: | Enhancement Mode Field Effect Transistor |
Typical Turn-Off Delay Time: | 11 ns |
Typical Turn-On Delay Time: | 7 ns |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 1 V |
Maximum Continuous Drain Current | 115 mA |
Maximum Drain Source Resistance | 13.5 Ω |
Maximum Drain Source Voltage | 60 V |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Gate Threshold Voltage | 2V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 200 mW |
Minimum Operating Temperature | -55 °C |
Mounting Type | Surface Mount |
Package Type | SOT-323 |
Transistor Configuration | Single |
Transistor Material | Si |
Width | 1.35mm |
Вес, г | 0.05 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 311 КБ
Datasheet
pdf, 120 КБ
Datasheet 2N7002W-7-F
pdf, 304 КБ
Datasheet 2N7002W-7-F
pdf, 198 КБ
Документация
pdf, 198 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов