2SC6096-TD-E
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
220 руб.
Мин. кол-во для заказа 2 шт.
от 5 шт. —
170 руб.
от 10 шт. —
138 руб.
от 82 шт. —
118.50 руб.
Добавить в корзину 2 шт.
на сумму 440 руб.
Описание
Электроэлемент
TRANSISTOR, NPN, 100V, 2A, SOT-89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:300MHz; Power Dissipation Pd:3.5W; DC Collector Current:2A; DC Current Gain hFE:300hFE; Transis
Технические параметры
| Current - Collector (Ic) (Max) | 2A |
| Current - Collector Cutoff (Max) | 1ВµA(ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 100mA, 5V |
| Frequency - Transition | 300MHz |
| Manufacturer | ON Semiconductor |
| Mounting Type | Surface Mount |
| Operating Temperature | 150В°C(TJ) |
| Package / Case | TO-243AA |
| Packaging | Tape & Reel(TR) |
| Part Status | Active |
| Power - Max | 1.3W |
| Series | - |
| Supplier Device Package | PCP |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 100mA, 1A |
| Voltage - Collector Emitter Breakdown (Max) | 100V |
| Collector Current (Ic) | 2A |
| Collector Cut-Off Current (Icbo) | 1uA |
| Collector-Emitter Breakdown Voltage (Vceo) | 100V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 150mV@100mA, 1A |
| DC Current Gain (hFE@Ic,Vce) | 300@100mA, 5V |
| Power Dissipation (Pd) | 1.3W |
| Transition Frequency (fT) | 300MHz |
| Brand: | onsemi |
| Collector- Base Voltage VCBO: | 120 V |
| Collector- Emitter Voltage VCEO Max: | 100 V |
| Collector-Emitter Saturation Voltage: | 100 mV |
| Configuration: | Single |
| DC Collector/Base Gain hfe Min: | 300 at 100 mA, 5 V |
| DC Current Gain hFE Max: | 600 at 100 mA, 5 V |
| Emitter- Base Voltage VEBO: | 6.5 V |
| Factory Pack Quantity: | 1000 |
| Gain Bandwidth Product fT: | 300 MHz |
| Manufacturer: | onsemi |
| Maximum DC Collector Current: | 2 A |
| Maximum Operating Temperature: | +150 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | PCP-3 |
| Pd - Power Dissipation: | 3.5 W |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | NPN |
| Вес, г | 0.106 |
Техническая документация
Datasheet
pdf, 322 КБ
Datasheet 2SC6096-TD-E
pdf, 315 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные (BJTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
