BC848CDW1T1G, Массив биполярных транзисторов, Двойной NPN, 30 В, 100 мА, 380 мВт, 420 hFE, SOT-363

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64 руб.

Мин. кол-во для заказа 45 шт.

Кратность заказа 5 шт.

от 100 шт. — 28 руб.

Добавить в корзину 45 шт. на сумму 2 880 руб.

Номенклатурный номер: 8327542655

Артикул: BC848CDW1T1G

Полупроводники - Дискретные\Транзисторы\Биполярные Транзисторы\Биполярные Массивы Транзисторов - BJT

Trans GP BJT NPN 30V 0.1A 380mW 6-Pin SC-88 T/R

Brand	ON Semiconductor
Collector- Base Voltage VCBO	30 V
Collector- Emitter Voltage VCEO Max	30 V
Collector-Emitter Saturation Voltage	0.6 V
Configuration	Dual
Continuous Collector Current	0.1 A
DC Collector/Base Gain Hfe Min	420
Emitter- Base Voltage VEBO	5 V
Factory Pack Quantity	3000
Gain Bandwidth Product FT	100 MHz
Height	0.9 mm
Length	2 mm
Manufacturer	ON Semiconductor
Maximum DC Collector Current	0.1 A
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Mounting Style	SMD/SMT
Package / Case	SC-70-6
Packaging	Cut Tape or Reel
Pd - Power Dissipation	380 mW
Product Category	Bipolar Transistors - BJT
Product Type	BJTs - Bipolar Transistors
Series	BC848CDW1
Subcategory	Transistors
Transistor Polarity	NPN
Unit Weight	0.000988 oz
Width	1.25 mm
Automotive	No
ECCN (US)	EAR99
Maximum Base Emitter Saturation Voltage (V)	0.7(Typ)@0.5mA@10mA\|0.9(Typ)@5mA@100mA
Maximum Collector Base Voltage (V)	30
Maximum Collector Cut-Off Current (nA)	15
Maximum Collector-Emitter Saturation Voltage (V)	0.25@0.5mA@10mA\|0.6@5mA@100mA
Maximum Collector-Emitter Voltage (V)	30
Maximum DC Collector Current (A)	0.1
Maximum Emitter Base Voltage (V)	5
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	380
Minimum DC Current Gain	420@2mA@5V
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	2
Operating Junction Temperature (°C)	-55 to 150
Part Status	Active
PCB changed	6
Pin Count	6
PPAP	No
Standard Package Name	SOT
Supplier Package	SC-88
Type	NPN
Вес, г	0.01