BD911, NPN биполярный транзистор
The BD911 from STMicroelectronics is a through hole NPN complementary power transistors in TO-220 package. This device manufactured in epitaxial planar technology.
• Collector to emitter voltage (Vce) is 100V
• Collector current (Ic) is 15A
• Power dissipation (Pd) is 90W
• Collector to emitter saturation voltage of 3V at 10A collector current
• DC current gain (hFE) of 5 at 10A collector current
• Operating junction temperature range from 150°C