BFU710F,115, RF Bipolar Transistors NPN WIDEBAND SILICON GERMANIUM RF TRANS

BFU7xxF Microwave Transistors NXP Semiconductors offer BFU7xxF Microwave Transistors with low noise, high linearity in a plastic, 4-pin dual-emitter SOT343F package. BFU710F Microwave Transistors feature a high maximum power gain of 14 dB at 12 GHz and noise figure = 1.45 dB at 12 GHz. BFU760F Microwave Transistors feature high maximum output third order intercept point 32 dBm at 1.8 GHz. BFU790F Microwave Transistors feature high maximum output power at 1 dB compression 20 dBm at 1.8 GHz. Applications for NXP Semiconductors BFU7xxF Microwave Transistors include high linearity applications, medium output power applications, GPS, Zigbee and Bluetooth. Learn More