BSC016N06NSATMA1, МОП-транзистор, N Канал, 100 А, 60 В, 0.0014 Ом, 10 В, 2.8 В
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
740 руб.
Мин. кол-во для заказа 4 шт.
от 10 шт. —
660 руб.
от 100 шт. —
511 руб.
Добавить в корзину 4 шт.
на сумму 2 960 руб.
Описание
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families.
Технические параметры
Brand | Infineon Technologies |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity | 5000 |
Fall Time | 9 ns |
Forward Transconductance - Min | 70 S |
Id - Continuous Drain Current | 100 A |
Manufacturer | Infineon |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number Of Channels | 1 Channel |
Package / Case | TDSON-8 |
Packaging | Cut Tape or Reel |
Part # Aliases | BSC016N06NSATMA1 BSC16N6NSXT SP000924882 |
Pd - Power Dissipation | 139 W |
Product Category | MOSFET |
Product Type | MOSFET |
Qg - Gate Charge | 71 nC |
Rds On - Drain-Source Resistance | 1.6 mOhms |
Rise Time | 9 ns |
Series | OptiMOS 5 |
Subcategory | MOSFETs |
Technology | Si |
Tradename | OptiMOS |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 35 ns |
Typical Turn-On Delay Time | 19 ns |
Vds - Drain-Source Breakdown Voltage | 60 V |
Vgs - Gate-Source Voltage | 10 V |
Vgs Th - Gate-Source Threshold Voltage | 2.1 V |
Channel Type | N |
Forward Diode Voltage | 1.2V |
Maximum Continuous Drain Current | 100 A |
Maximum Drain Source Resistance | 2.4 mΩ |
Maximum Drain Source Voltage | 60 V |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Power Dissipation | 139 W |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | TDSON |
Pin Count | 8 |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 71 nC @ 10 V |
Width | 5mm |
Brand: | Infineon Technologies |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 5000 |
Fall Time: | 9 ns |
Forward Transconductance - Min: | 70 S |
Id - Continuous Drain Current: | 100 A |
Manufacturer: | Infineon |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | TDSON-8 |
Part # Aliases: | BSC16N6NSXT SP000924882 BSC016N06NSATMA1 |
Pd - Power Dissipation: | 139 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 71 nC |
Rds On - Drain-Source Resistance: | 1.6 mOhms |
Rise Time: | 9 ns |
Series: | OptiMOS 5 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | OptiMOS |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 35 ns |
Typical Turn-On Delay Time: | 19 ns |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2.1 V |
Height | 1.27 mm |
Length | 5.9 mm |
RoHS | Details |
Вес, г | 0.209 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 6180 КБ
Datasheet
pdf, 1237 КБ
Datasheet BSC016N06NSATMA1
pdf, 605 КБ
Документация
pdf, 1293 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов