CSD18534Q5A
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410 руб.
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310 руб.
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Описание
Электроэлемент
MOSFET, N-CH, 60V, 50A, 8SON; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0078ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.9V; Power Dissipation Pd:3.1W; Transistor Case Style:SON; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current - (A) | 50 |
| Maximum Drain Source Resistance - (mOhm) | 9.8@10V |
| Maximum Drain Source Voltage - (V) | 60 |
| Maximum Gate Source Voltage - (V) | ??20 |
| Maximum Gate Threshold Voltage - (V) | 2.3 |
| Maximum Power Dissipation - (mW) | 3100 |
| Military | No |
| Number of Elements per Chip | 1 |
| Operating Temperature - (??C) | -55~150 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Process Technology | NexFET |
| Standard Package Name | SON |
| Supplier Package | VSONP EP |
| Typical Gate Charge @ 10V - (nC) | 17 |
| Typical Gate Charge @ Vgs - (nC) | 8.5@4.5VI17@10V |
| Typical Input Capacitance @ Vds - (pF) | 1360@30V |
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 2 ns |
| Forward Transconductance - Min: | 122 S |
| Id - Continuous Drain Current: | 100 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | VSONP-8 |
| Pd - Power Dissipation: | 3.1 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 17 nC |
| Rds On - Drain-Source Resistance: | 9.8 mOhms |
| Rise Time: | 5.5 ns |
| Series: | CSD18534Q5A |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 15 ns |
| Typical Turn-On Delay Time: | 5.2 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.9 V |
| Вес, г | 0.13 |
Техническая документация
Datasheet CSD18534Q5AT
pdf, 445 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
