DMG1013UW-7, Транзистор P-MOSFET, полевой, -20В, -0,54А, 310мВт, SOT323

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52 руб.

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Добавить в корзину 5 шт. на сумму 260 руб.

Номенклатурный номер: 8026856438

Артикул: DMG1013UW-7

Бренд: DIODES INC.

Описание Транзистор P-MOSFET, полевой, -20В, -0,54А, 310мВт, SOT323

Continuous Drain Current (Id) @ 25В°C	820mA
Power Dissipation-Max (Ta=25В°C)	310mW
Rds On - Drain-Source Resistance	750mО© @ 430mA,4.5V
Transistor Polarity	P Channel
Vds - Drain-Source Breakdown Voltage	20V
Vgs - Gate-Source Voltage	1V @ 250uA
Automotive	No
Channel Mode	Enhancement
Channel Type	P
Configuration	Single
ECCN (US)	EAR99
EU RoHS	Compliant
Lead Shape	Gull-wing
Maximum Continuous Drain Current (A)	0.82
Maximum Drain Source Resistance (mOhm)	750 4.5V
Maximum Drain Source Voltage (V)	20
Maximum Gate Source Voltage (V)	±6
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	310
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	1
Packaging	Tape and Reel
Part Status	Active
PCB changed	3
Pin Count	3
PPAP	No
Product Category	Power MOSFET
Standard Package Name	SOT-323
Supplier Package	SOT-323
Typical Fall Time (ns)	20.7
Typical Gate Charge @ Vgs (nC)	0.6224 4.5V
Typical Input Capacitance @ Vds (pF)	59.76 16V
Typical Rise Time (ns)	8.1
Typical Turn-Off Delay Time (ns)	28.4
Typical Turn-On Delay Time (ns)	5.1
Maximum Continuous Drain Current	820 mA
Maximum Drain Source Resistance	1.5 Ω
Maximum Drain Source Voltage	20 V
Maximum Gate Source Voltage	-6 V, +6 V
Maximum Gate Threshold Voltage	1V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	310 mW
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Package Type	SOT-323
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	0.62 nC @ 4.5 V
Width	1.35mm
Вес, г	0.02