DMN2056U-7, Транзистор N-MOSFET, полевой, 20В, 3,7А, 0,94Вт, SOT23
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Описание
Описание Транзистор N-MOSFET, полевой, 20В, 3,7А, 0,94Вт, SOT23
Технические параметры
| Brand | Diodes Incorporated |
| Factory Pack Quantity | 3000 |
| Manufacturer | Diodes Incorporated |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 |
| Packaging | Cut Tape or Reel |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Subcategory | MOSFETs |
| Technology | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Forward Diode Voltage | 1.2V |
| Maximum Continuous Drain Current | 4 A |
| Maximum Drain Source Resistance | 85 mΩ |
| Maximum Drain Source Voltage | 20 V |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Maximum Gate Threshold Voltage | 1V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 940 mW |
| Minimum Gate Threshold Voltage | 0.4V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-23 |
| Pin Count | 3 |
| Series | DMN2056U |
| Transistor Configuration | Single |
| Typical Gate Charge @ Vgs | 4.3 nC @ 10 V |
| Width | 1.4mm |
| Brand: | Diodes Incorporated |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 1.7 ns |
| Id - Continuous Drain Current: | 4 A |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOT-23-3 |
| Pd - Power Dissipation: | 940 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 4.3 nC |
| Rds On - Drain-Source Resistance: | 38 mOhms |
| Rise Time: | 2.8 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Typical Turn-Off Delay Time: | 8.5 ns |
| Typical Turn-On Delay Time: | 1.8 ns |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Вес, г | 5 |
Техническая документация
Datasheet
pdf, 443 КБ
Datasheet
pdf, 1680 КБ
Datasheet DMN2056U-7
pdf, 309 КБ
Datasheet DMN2056U-7
pdf, 327 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
