FCP099N65S3, 650V 30A 227W 4.5V@3mA 1 N-channel TO-220 MOSFETs ROHS (8044373355)
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Номенклатурный номер
8044373355
Артикул
FCP099N65S3
Бренд
Brand:
onsemi/Fairchild
Channel Mode:
Enhancement
Configuration:
Single
Factory Pack Quantity:
800
Fall Time:
5 ns
Все параметры
Datasheet
pdf, 377 КБ
640 шт., срок 6-7 недель
990 руб.
от 10 шт. —
780 руб.
от 50 шт. —
680 руб.
от 100 шт. —
609.20 руб.
1 шт.
на сумму 990 руб.
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от 0 руб. × 4 платежа
от 0 руб. × 4 платежа
Альтернативные предложения2
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SuperFET® III MOSFETs onsemi SuperFET® III MOSFETs are high voltage Super-Junction (SJ) N-Channel MOSFETs designed to meet the high power density, system efficiency, and exceptional reliability requirements of telecom, server, electric vehicle (EV) charger and solar products. These devices combine best-in-class reliability, low EMI, excellent efficiency, and superior thermal performance to make them an ideal choice for high-performance applications. Complementing their performance characteristics, the broad range of package options offered by onsemi SuperFET III MOSFETs gives product designers high flexibility, particularly with size-constrained designs.
Технические параметры
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 800 |
| Fall Time: | 5 ns |
| Forward Transconductance - Min: | 19 S |
| Id - Continuous Drain Current: | 30 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-220-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 227 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 61 nC |
| Rds On - Drain-Source Resistance: | 79 mOhms |
| Rise Time: | 24 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 60 ns |
| Typical Turn-On Delay Time: | 23 ns |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Вес, г | 2.95 |
Техническая документация
Datasheet
pdf, 377 КБ
Сроки доставки
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