FDC608PZ, Trans MOSFET P-CH 20V 5.8A 6-Pin TSOT-23 T/R

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48 руб.

Кратность заказа 3000 шт.

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Добавить в корзину 3000 шт. на сумму 144 000 руб.

Номенклатурный номер: 8002305590

Артикул: FDC608PZ

Diodes, Transistors and Thyristors\FET Transistors\MOSFETs

Описание Транзистор: P-MOSFET, полевой, -20В, -5,8А, 1,6Вт, SuperSOT-6 Характеристики

Automotive	No
Channel Mode	Enhancement
Channel Type	P
Configuration	Single Quad Drain
ECCN (US)	EAR99
EU RoHS	Compliant
Lead Shape	Gull-wing
Maximum Continuous Drain Current (A)	5.8
Maximum Drain Source Resistance (mOhm)	30@4.5V
Maximum Drain Source Voltage (V)	20
Maximum Gate Source Voltage (V)	±12
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	1600
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	1
Packaging	Tape and Reel
Part Status	Active
PCB changed	6
Pin Count	6
PPAP	No
Process Technology	TMOS
Product Category	Power MOSFET
Standard Package Name	SOT
Supplier Package	TSOT-23
Typical Fall Time (ns)	60
Typical Gate Charge @ Vgs (nC)	17@4.5V
Typical Input Capacitance @ Vds (pF)	1330@10V
Typical Rise Time (ns)	8
Typical Turn-Off Delay Time (ns)	91
Typical Turn-On Delay Time (ns)	13
Maximum Continuous Drain Current	5.8 A
Maximum Drain Source Resistance	43 mΩ
Maximum Drain Source Voltage	20 V
Maximum Gate Source Voltage	-12 V, +12 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	1.6 W
Minimum Gate Threshold Voltage	0.4V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Package Type	SOT-23
Series	PowerTrench
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	17 nC @ 4.5 V
Width	1.7mm
Вес, г	1