FDC6321C, Двойной МОП-транзистор, N и P Канал, 460 мА, 25 В, 0.33 Ом, 4.5 В, 800 мВ
The FDC6321C is a dual N/P-channel Digital FET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. The device is an improved design especially for low voltage applications as a replacement for bipolar digital transistors in load switching applications. Since bias resistors are not required, this dual digital FET can replace several digital transistors with difference bias resistors.
• Very low level gate drive requirements allowing direct operation in 3V circuits
• Gate-source Zener for ESD ruggedness
Полупроводники - Дискретные\Транзисторы\МОП-транзисторы