FDC6506P, MOSFET P-Channel 30V 1.8A

PartNumber: FDC6506P
Ном. номер: 8083940494
Производитель: Fairchild Semiconductor
FDC6506P, MOSFET P-Channel 30V 1.8A
Доступно на заказ более 70 шт. Отгрузка со склада в г.Москва 4-5 недель.
66 руб. × = 660 руб.
Количество товаров должно быть кратно 10 шт.
от 100 шт. — 28 руб.
от 500 шт. — 21.68 руб.

Описание

PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Semiconductors

Технические параметры

Minimum Gate Threshold Voltage
1V
Number of Elements per Chip
2
Pin Count
6
ширина
1.7mm
Максимальная рассеиваемая мощность
0.96 W
Maximum Gate Source Voltage
±20 V
размеры
3 x 1.7 x 1mm
Maximum Drain Source Voltage
-30 V
высота
1mm
Maximum Continuous Drain Current
1.8 A
Typical Gate Charge @ Vgs
2.3 nC@ -10 V
максимальная рабочая температура
+150 °C
тип монтажа
Surface Mount
конфигурация
Dual Drain
Channel Mode
Enhancement
разрешение
Power MOSFET
Typical Turn-Off Delay Time
14 ns
Minimum Operating Temperature
-55 °C
Channel Type
P
Maximum Drain Source Resistance
0.28 Ω
длина
3mm
Typical Input Capacitance @ Vds
190 pF@ -15 V
тип упаковки
SOT-23
Typical Turn-On Delay Time
7 ns

Дополнительная информация

FDC6506P, Dual P-Channel Logic Level PowerTrench MOSFET FDC6506P