FDC654P, MOSFET, Fairchild, FDC654

PartNumber: FDC654P
Ном. номер: 8009838930
Производитель: Fairchild Semiconductor
FDC654P, MOSFET, Fairchild, FDC654
Доступно на заказ более 100 уп. Отгрузка со склада в г.Москва 4-5 недель.
38 руб. × = 760 руб.
Цена указана за упаковку из 20
Количество товаров должно быть кратно 20 уп.
от 40 уп. — 31 руб.
от 200 уп. — 22.60 руб.


PowerTrench® P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.


Технические параметры

тип монтажа
Surface Mount
Channel Mode
Typical Turn-On Delay Time
6 ns
Minimum Operating Temperature
-55 °C
Channel Type
3 x 1.7 x 1mm
Typical Gate Charge @ Vgs
6.2 nC@ -10 V
Maximum Drain Source Resistance
0.125 Ω
Maximum Continuous Drain Current
3.6 A
тип упаковки
максимальная рабочая температура
+150 °C
Maximum Drain Source Voltage
-30 V
Minimum Gate Threshold Voltage
Quad Drain
Logic Level MOSFET
Typical Turn-Off Delay Time
11 ns
Typical Input Capacitance @ Vds
298 pF@ -15 V
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
Pin Count
Максимальная рассеиваемая мощность
1.6 W

Дополнительная информация

FDC654P, Single P-Channel Logic Level PowerTrench MOSFET Data Sheet FDC654P