FDD86102, Транзистор полевой N-канальный 100В 8А

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680 руб.

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от 7 шт. — 528 руб.

Добавить в корзину 1 шт. на сумму 680 руб.

Номенклатурный номер: 8320384275

Артикул: FDD86102

Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы

Транзистор полевой N-канальный 100В 8А

Корпус	DPAK/TO-252AA
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	36 A
Maximum Drain Source Resistance	44 mΩ
Maximum Drain Source Voltage	100 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	62 W
Minimum Gate Threshold Voltage	2V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	DPAK(TO-252)
Pin Count	3
Series	PowerTrench
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	13.4 nC @ 10 V
Width	6.22mm
Brand:	onsemi/Fairchild
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	2500
Forward Transconductance - Min:	21 S
Id - Continuous Drain Current:	8 A
Manufacturer:	onsemi
Maximum Operating Temperature:	+125 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	DPAK-3
Pd - Power Dissipation:	3.1 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	13.4 nC
Rds On - Drain-Source Resistance:	19 mOhms
Series:	FDD86102
Subcategory:	MOSFETs
Technology:	Si
Tradename:	PowerTrench
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	3.1 V
Вес, г	0.66