FDD86110

820 руб.
от 2 шт.700 руб.
от 5 шт.625 руб.
Добавить в корзину 1 шт. на сумму 820 руб.
Номенклатурный номер: 8002990042

Описание

Электроэлемент
MOSFET, N CH, 100V, 50A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; P

Технические параметры

Brand ON Semiconductor/Fairchild
Channel Mode Enhancement
Configuration Single
Factory Pack Quantity 2500
Fall Time 3.9 ns
Forward Transconductance - Min 38 S
Height 2.39 mm
Id - Continuous Drain Current 12.5 A
Length 6.73 mm
Manufacturer ON Semiconductor
Maximum Operating Temperature +150 C
Minimum Operating Temperature -55 C
Mounting Style SMD/SMT
Number of Channels 1 Channel
Package / Case TO-252-3
Packaging Cut Tape
Pd - Power Dissipation 3.1 W
Product Category MOSFET
Qg - Gate Charge 25 nC
Rds On - Drain-Source Resistance 10.2 mOhms
Rise Time 5.4 ns
RoHS Details
Series FDD86110
Technology Si
Tradename PowerTrench
Transistor Polarity N-Channel
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 19 ns
Typical Turn-On Delay Time 12 ns
Unit Weight 0.009184 oz
Vds - Drain-Source Breakdown Voltage 100 V
Vgs - Gate-Source Voltage 20 V
Width 6.22 mm
Continuous Drain Current (Id) 12.5A;50A
Drain Source On Resistance (RDS(on)@Vgs,Id) 10.2mΩ@10V, 12.5A
Drain Source Voltage (Vdss) 100V
Gate Threshold Voltage (Vgs(th)@Id) 4V@250uA
Input Capacitance (Ciss@Vds) 2.265nF@50V
Operating Temperature -55℃~+150℃@(Tj)
Power Dissipation (Pd) 3.1W;127W
Total Gate Charge (Qg@Vgs) 35nC@10V
Type N Channel
Вес, г 1.134

Техническая документация

Datasheet FDD86110
pdf, 488 КБ
Документация
pdf, 490 КБ

Дополнительная информация

Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов