FDD86110
820 руб.
от 2 шт. —
700 руб.
от 5 шт. —
625 руб.
Добавить в корзину 1 шт.
на сумму 820 руб.
Описание
Электроэлемент
MOSFET, N CH, 100V, 50A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; P
Технические параметры
Brand | ON Semiconductor/Fairchild |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity | 2500 |
Fall Time | 3.9 ns |
Forward Transconductance - Min | 38 S |
Height | 2.39 mm |
Id - Continuous Drain Current | 12.5 A |
Length | 6.73 mm |
Manufacturer | ON Semiconductor |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | TO-252-3 |
Packaging | Cut Tape |
Pd - Power Dissipation | 3.1 W |
Product Category | MOSFET |
Qg - Gate Charge | 25 nC |
Rds On - Drain-Source Resistance | 10.2 mOhms |
Rise Time | 5.4 ns |
RoHS | Details |
Series | FDD86110 |
Technology | Si |
Tradename | PowerTrench |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 19 ns |
Typical Turn-On Delay Time | 12 ns |
Unit Weight | 0.009184 oz |
Vds - Drain-Source Breakdown Voltage | 100 V |
Vgs - Gate-Source Voltage | 20 V |
Width | 6.22 mm |
Continuous Drain Current (Id) | 12.5A;50A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 10.2mΩ@10V, 12.5A |
Drain Source Voltage (Vdss) | 100V |
Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
Input Capacitance (Ciss@Vds) | 2.265nF@50V |
Operating Temperature | -55℃~+150℃@(Tj) |
Power Dissipation (Pd) | 3.1W;127W |
Total Gate Charge (Qg@Vgs) | 35nC@10V |
Type | N Channel |
Вес, г | 1.134 |
Техническая документация
Datasheet FDD86110
pdf, 488 КБ
Документация
pdf, 490 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов