FDG316P, МОП-транзистор, P Канал, 1.6 А, -30 В, 190 мОм, -10 В, -1.6 В
The FDG316P is a P-channel Logic Level MOSFET produced using Fairchild Semiconductor's advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain superior switching performance. It is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
• High performance Trench technology for extremely low RDS (ON)
• Compact industry standard surface-mount package
• 3.5nC Typical low gate charge
Полупроводники - Дискретные\Транзисторы\МОП-транзисторы