FDG6320C, Двойной МОП-транзистор, N и P Канал, 220 мА, 25 В, 4 Ом, 4.5 В, 850 мВ
The FDG6320C is a dual N/P-channel logic level enhancement-mode MOSFET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.
• Very small package outline
• Very low level gate drive requirements allowing direct operation in 3V circuits (VGS (th) <1.5V)
• Gate-source Zener for ESD ruggedness
Полупроводники - Дискретные\Транзисторы\МОП-транзисторы