FDMA430NZ, Транзистор полевой N-канальный 30В 5A
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
30 руб.
Мин. кол-во для заказа 16 шт.
Добавить в корзину 16 шт.
на сумму 480 руб.
Описание
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Транзистор полевой N-канальный 30В 5A
Технические параметры
| Корпус | MicroFET6 | |
| Maximum Operating Temperature | +150 °C | |
| Maximum Power Dissipation | 2.4 W | |
| Mounting Type | Surface Mount | |
| Number of Elements per Chip | 1 | |
| Package Type | MicroFET 2x2 | |
| Pin Count | 6 | |
| Brand: | onsemi/Fairchild | |
| Channel Mode: | Enhancement | |
| Configuration: | Single | |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 | |
| Fall Time: | 7.1 ns | |
| Id - Continuous Drain Current: | 5 A | |
| Manufacturer: | onsemi | |
| Maximum Operating Temperature: | +150 C | |
| Minimum Operating Temperature: | -55 C | |
| Mounting Style: | SMD/SMT | |
| Number of Channels: | 1 Channel | |
| Package/Case: | MicroFET-6 | |
| Pd - Power Dissipation: | 900 mW | |
| Product Category: | MOSFET | |
| Product Type: | MOSFET | |
| Product: | MOSFET Small Signal | |
| Qg - Gate Charge: | 11 nC | |
| Rds On - Drain-Source Resistance: | 40 mOhms | |
| Rise Time: | 7.1 ns | |
| Series: | FDMA430NZ | |
| Subcategory: | MOSFETs | |
| Technology: | Si | |
| Tradename: | PowerTrench | |
| Transistor Polarity: | N-Channel | |
| Transistor Type: | 1 N-Channel | |
| Typical Turn-Off Delay Time: | 18.1 ns | |
| Typical Turn-On Delay Time: | 8.3 ns | |
| Vds - Drain-Source Breakdown Voltage: | 30 V | |
| Vgs - Gate-Source Voltage: | -12 V, +12 V | |
| Vgs th - Gate-Source Threshold Voltage: | 600 mV | |
| Automotive | No | |
| Channel Mode | Enhancement | |
| Channel Type | N | |
| Configuration | Single Quad Drain | |
| ECCN (US) | EAR99 | |
| EU RoHS | Compliant | |
| Lead Shape | No Lead | |
| Maximum Continuous Drain Current (A) | 5 | |
| Maximum Drain Source Resistance (mOhm) | 40@4.5V | |
| Maximum Drain Source Voltage (V) | 30 | |
| Maximum Gate Source Voltage (V) | ±12 | |
| Maximum Operating Temperature (°C) | 150 | |
| Maximum Power Dissipation (mW) | 2400 | |
| Minimum Operating Temperature (°C) | -55 | |
| Mounting | Surface Mount | |
| Packaging | Tape and Reel | |
| Part Status | Active | |
| PCB changed | 6 | |
| PPAP | No | |
| Process Technology | TMOS | |
| Product Category | Power MOSFET | |
| Standard Package Name | DFN | |
| Supplier Package | WDFN EP | |
| Typical Fall Time (ns) | 6 | |
| Typical Gate Charge @ Vgs (nC) | 7.3@4.5V | |
| Typical Input Capacitance @ Vds (pF) | 600@10V | |
| Typical Rise Time (ns) | 7.1 | |
| Typical Turn-Off Delay Time (ns) | 18.1 | |
| Typical Turn-On Delay Time (ns) | 8.3 | |
| Вес, г | 0.05 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
