FDMC5614P, MOSFET P-Channel 60V 5.7A

PartNumber: FDMC5614P
Ном. номер: 8147584804
Производитель: Fairchild Semiconductor
Фото 1/2 FDMC5614P, MOSFET P-Channel 60V 5.7A
Фото 2/2 FDMC5614P, MOSFET P-Channel 60V 5.7A
Доступно на заказ 70 шт. Отгрузка со склада в г.Москва 4-5 недель.
160 руб. × = 800 руб.
Количество товаров должно быть кратно 5 шт.
от 25 шт. — 72 руб.

Описание

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Semiconductors

Технические параметры

тип монтажа
Surface Mount
Typical Turn-Off Delay Time
32 ns
Number of Elements per Chip
1
ширина
3mm
Channel Type
P
разрешение
Power MOSFET
Pin Count
8
Typical Turn-On Delay Time
10 ns
конфигурация
Quad Drain, Single, Triple Source
Typical Input Capacitance @ Vds
795 pF@ 30 V
Typical Gate Charge @ Vgs
15 nC@ 10 V
Minimum Operating Temperature
-55 °C
Maximum Gate Source Voltage
±20 V
Максимальная рассеиваемая мощность
2.1 W
Minimum Gate Threshold Voltage
1V
максимальная рабочая температура
+150 °C
Maximum Drain Source Resistance
0.1 Ω
высота
0.95mm
Maximum Drain Source Voltage
60 V
Maximum Continuous Drain Current
5.7 A
тип упаковки
MLP
длина
3mm
размеры
3 x 3 x 0.95mm
Channel Mode
Enhancement

Дополнительная информация

Datasheet FDMC5614P
Trans MOSFET P-CH 60V 5.7A 8-Pin MLP EP