FDMS3602S, MOSFET Dual N-Ch 25V 15A/

PartNumber: FDMS3602S
Ном. номер: 8074659747
Производитель: Fairchild Semiconductor
FDMS3602S, MOSFET Dual N-Ch 25V 15A/
Доступно на заказ более 10 шт. Отгрузка со склада в г.Москва 4-5 недель.
460 руб. × = 460 руб.
от 10 шт. — 240 руб.


PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer an increase in system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and a soft reverse recovery body diode, which contribute towards fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.


Технические параметры

Number of Elements per Chip
Maximum Gate Source Voltage
±20 V
Minimum Operating Temperature
-55 °C
Typical Turn-Off Delay Time
19 ns, 31 ns
Minimum Gate Threshold Voltage
Triple Drain
Typical Turn-On Delay Time
12 (Q2) ns, 7.9 (Q1) ns
5 x 6 x 1.05mm
Maximum Drain Source Voltage
25 V
Maximum Drain Source Resistance
0.0039 (Q2) Ω, 0.0087 (Q1) Ω
тип упаковки
Power 56
максимальная рабочая температура
+150 °C
тип монтажа
Surface Mount
Channel Mode
Maximum Continuous Drain Current
135 (Q2) A, 65 (Q1) A
Channel Type
Pin Count
Typical Input Capacitance @ Vds
1264 pF@ 13 V, 3097 pF@ 13 V
Typical Gate Charge @ Vgs
19 nC@ 0 → 10 (Transistor 1) V, 45 nC@ 0 → 10 (Transistor 2) V
Максимальная рассеиваемая мощность
2.2 W, 2.5 W

Дополнительная информация

FDMS3602S, PowerTrench Power Stage 25V Asymmetric Dual N-Channel MOSFET FDMS3602S