FDMS86163P, MOSFET P-Ch 100V 50A Powe

PartNumber: FDMS86163P
Ном. номер: 8012202607
Производитель: Fairchild Semiconductor
FDMS86163P, MOSFET P-Ch 100V 50A Powe
Доступно на заказ более 20 уп. Отгрузка со склада в г.Москва 4-5 недель.
200 руб. × = 1 000 руб.
Цена указана за упаковку из 5
Количество товаров должно быть кратно 5 уп.
от 25 уп. — 140 руб.
от 250 уп. — 95.44 руб.


PowerTrench® P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.


Технические параметры

Power Trench MOSFET
Channel Mode
Channel Type
5 x 5.85 x 1.05mm
Maximum Continuous Drain Current
7.9 A
Maximum Drain Source Resistance
0.036 Ω
Maximum Drain Source Voltage
-100 V
Maximum Gate Source Voltage
±25 V
Maximum Operating Temperature
+150 °C
Максимальная рассеиваемая мощность
104 W
Minimum Operating Temperature
-55 °C
Number of Elements per Chip
Package Type
Power 56
Pin Count
Typical Gate Charge @ Vgs
42 nC@ 10 V
Typical Input Capacitance @ Vds
3070 pF@ -50 V
Typical Turn-Off Delay Time
33 ns
Typical Turn-On Delay Time
17 ns
Minimum Gate Threshold Voltage
Mounting Type
Surface Mount

Дополнительная информация

FDMS86163P, P-Channel PowerTrench MOSFET -100V, -50A, 22mOhm FDMS86163P