FDN339AN, МОП-транзистор, N Канал, 3 А, 20 В, 0.035 Ом, 4.5 В, 850 мВ

Изображения служат только для ознакомления,
см. техническую документацию

150 руб.

Мин. кол-во для заказа 20 шт.

Кратность заказа 5 шт.

от 100 шт. — 90 руб.

Добавить в корзину 20 шт. на сумму 3 000 руб.

Номенклатурный номер: 8109331017

Артикул: FDN339AN

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types.

Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	3 A
Maximum Drain Source Resistance	35 mΩ
Maximum Drain Source Voltage	20 V
Maximum Gate Source Voltage	-8 V, +8 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	500 mW
Minimum Gate Threshold Voltage	0.4V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOT-23
Pin Count	3
Series	PowerTrench
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	7 nC @ 4.5 V
Width	1.4mm
Brand:	onsemi/Fairchild
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	3000
Fall Time:	10 ns
Forward Transconductance - Min:	11 S
Id - Continuous Drain Current:	3 A
Manufacturer:	onsemi
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	SSOT-3
Part # Aliases:	FDN339AN_NL
Pd - Power Dissipation:	500 mW
Product Category:	MOSFET
Product Type:	MOSFET
Product:	MOSFET Small Signals
Qg - Gate Charge:	10 nC
Rds On - Drain-Source Resistance:	29 mOhms
Rise Time:	10 ns
Series:	FDN339AN
Subcategory:	MOSFETs
Technology:	Si
Tradename:	PowerTrench
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Type:	MOSFET
Typical Turn-Off Delay Time:	18 ns
Typical Turn-On Delay Time:	8 ns
Vds - Drain-Source Breakdown Voltage:	20 V
Vgs - Gate-Source Voltage:	-8 V, +8 V
Vgs th - Gate-Source Threshold Voltage:	400 mV
Вес, г	0.02