FDS4935BZ, Транзистор

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97 шт. со склада г.Москва, срок 3 недели

250 руб.

Добавить в корзину 1 шт. на сумму 250 руб.

Номенклатурный номер: 8013010024

Артикул: FDS4935BZ

Бренд: Нет торговой марки

Описание Транзистор P-MOSFET x2, полевой, -30В, -6,9А, 1,6Вт, SO8 Характеристики

Brand	ON Semiconductor/Fairchild
Channel Mode	Enhancement
Configuration	Dual Dual Drain
Factory Pack Quantity	2500
Fall Time	13 ns
Forward Transconductance - Min	22 S
Height	1.75 mm
Id - Continuous Drain Current	-6.9 A
Length	4.9 mm
Manufacturer	ON Semiconductor
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	2 Channel
Package / Case	SO-8
Packaging	Reel
Pd - Power Dissipation	1.6 W
Product	MOSFET Small Signal
Product Category	MOSFET
Rds On - Drain-Source Resistance	18 mOhms
Rise Time	13 ns
RoHS	Details
Series	FDS4935BZ
Technology	Si
Tradename	PowerTrench
Transistor Polarity	P-Channel
Transistor Type	2 P-Channel
Type	MOSFET
Typical Turn-Off Delay Time	68 ns
Typical Turn-On Delay Time	12 ns
Unit Weight	0.006596 oz
Vds - Drain-Source Breakdown Voltage	-30 V
Vgs - Gate-Source Voltage	25 V
Width	3.9 mm
Channel Type	P
Maximum Continuous Drain Current	6.9 A
Maximum Drain Source Resistance	22 mΩ
Maximum Drain Source Voltage	30 V
Maximum Gate Source Voltage	-25 V, +25 V
Maximum Power Dissipation	1.6 W
Minimum Gate Threshold Voltage	1V
Mounting Type	Surface Mount
Number of Elements per Chip	2
Package Type	SOIC
Pin Count	8
Transistor Configuration	Isolated
Transistor Material	Si
Typical Gate Charge @ Vgs	29 nC @ 10 V
Вес, г	0.232