FDS8896, Силовой МОП-транзистор, N Канал, 30 В, 15 А, 0.0049 Ом, SOIC, Surface Mount

Изображения служат только для ознакомления,
см. техническую документацию

190 руб.

Мин. кол-во для заказа 15 шт.

Кратность заказа 5 шт.

от 100 шт. — 145 руб.

Добавить в корзину 15 шт. на сумму 2 850 руб.

Номенклатурный номер: 8147673257

Артикул: FDS8896

Полупроводники - Дискретные\МОП-транзисторы\Одиночные МОП-транзисторы

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types.

Brand:	onsemi/Fairchild
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity:	2500
Fall Time:	24 ns
Id - Continuous Drain Current:	16 A
Manufacturer:	onsemi
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	SOIC-8
Part # Aliases:	FDS8896_NL
Pd - Power Dissipation:	2.5 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	67 nC
Rds On - Drain-Source Resistance:	6 mOhms
Rise Time:	37 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Type:	MOSFET
Typical Turn-Off Delay Time:	60 ns
Typical Turn-On Delay Time:	8 ns
Vds - Drain-Source Breakdown Voltage:	30 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1.2 V
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	15 A
Maximum Drain Source Resistance	6 mΩ
Maximum Drain Source Voltage	30 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	2.5 W
Minimum Gate Threshold Voltage	1.2V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOIC
Pin Count	8
Series	PowerTrench
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	50 nC @ 10 V
Width	4mm
Вес, г	0.907