FM33256B-G, NVRAM, FRAM, 256 Кбит, 32К x 8бит, SPI, SOIC

PartNumber: FM33256B-G
Ном. номер: 8035651153
Производитель: Cypress Semiconductor
FM33256B-G, NVRAM, FRAM, 256 Кбит, 32К x 8бит, SPI, SOIC
Доступно на заказ 82 шт. Отгрузка со склада в г.Москва 2-3 недели.
1 690 руб. × = 1 690 руб.
от 10 шт. — 1 400 руб.

Описание

The FM33256B-G is a 256kB device integrates F-RAM Memory with the most commonly needed functions for processor-based systems. Major features include nonvolatile memory, real time clock, low-VDD reset, watchdog timer, nonvolatile event counter, lockable 64-bit serial number area and general purpose comparator that can be used for a power-fail interrupt or any other purpose. It is a nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead and system-level reliability problems caused by other nonvolatile memories. It is capable of supporting 10¹⁴ read/write cycles or 100 million times more write cycles than EEPROM. The real time clock provides time and date information in BCD format. It can be permanently powered from an external backup voltage source, either a battery or a capacitor.

• NoDelay™ Writes
• Advanced high-reliability ferroelectric process
• High integration device replaces multiple parts
• Serial nonvolatile memory
• Real-time clock with alarm
• Low VDD detection drives reset
• Early power-fail warning/NMI
• Serial number with write-lock for security
• Real-time clock/calendar
• Seconds through centuries in BCD format
• Tracks leap years through 2099
• Software calibration
• Supports battery or capacitor backup
• Processor companion
• Programmable low-VDD reset thresholds
• Manual reset filtered and debounced
• Nonvolatile event counter tracks system intrusions or other events
• Comparator for power-fail interrupt or other use
• Fast serial peripheral interface
• RTC, Supervisor controlled via SPI interface

Полупроводники - Микросхемы\Память\Энергонезависимая RAM

Технические параметры

Тип памяти
FRAM
Минимальная Рабочая Температура
-40 C
Максимальная Рабочая Температура
85 C
Максимальное Напряжение Питания
3.6В
Минимальное Напряжение Питания
2.7В
Количество Выводов
14вывод(-ов)
Упаковка
Поштучно
Тип Интерфейса ИС
SPI
Стиль Корпуса Микросхемы Памяти
SOIC
Размер Памяти
256Кбит
Конфигурация Памяти NVRAM
32К x 8бит

Дополнительная информация

Datasheet FM33256B-G