FQD19N10LTM, Транзистор N-CH 100V 15.6A [DPAK]

Артикул: FQD19N10LTM
Ном. номер: 9000316752
Производитель: Fairchild Semiconductor
Фото 1/2 FQD19N10LTM, Транзистор N-CH 100V 15.6A [DPAK]
Фото 2/2 FQD19N10LTM, Транзистор N-CH 100V 15.6A [DPAK]
Доступно на заказ 45 шт. Отгрузка со склада в г.Москва 4-5 недель.
72 × = 360
Количество товаров должно быть кратно 5 шт.

Описание

QFET® N-Channel MOSFET, 11A to 30A, Fairchild Semiconductor
Fairchild Semiconductor's new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Технические параметры

конфигурация
Single
ширина
6.1mm
Pin Count
3
разрешение
Power MOSFET
Number of Elements per Chip
1
Максимальная рассеиваемая мощность
2.5 W
Minimum Gate Threshold Voltage
1V
Typical Turn-Off Delay Time
20 ns
Typical Input Capacitance @ Vds
670 pF@ 25 V
Maximum Gate Source Voltage
±20 V
Minimum Operating Temperature
-55 °C
Typical Turn-On Delay Time
14 ns
Typical Gate Charge @ Vgs
14 nC@ 5 V
размеры
6.6 x 6.1 x 2.3mm
Channel Type
N
Channel Mode
Enhancement
Maximum Drain Source Resistance
0.1 Ω
максимальная рабочая температура
+150 °C
Maximum Drain Source Voltage
100 V
тип упаковки
D-PAK
Maximum Continuous Drain Current
15.6 A
высота
2.3mm
длина
6.6mm
тип монтажа
Surface Mount

Техническая документация

FQD19N10L
pdf, 1406 КБ

Дополнительная информация

Trans MOSFET N-CH 100V 15.6A 3-Pin DPAK FQD19N10LTM
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