FQPF4N90C, Транзистор N-CH 900V 4A [TO-220F]

Артикул: FQPF4N90C
Ном. номер: 9000089091
Производитель: Fairchild Semiconductor
Фото 1/4 FQPF4N90C, Транзистор N-CH 900V 4A [TO-220F]
Фото 2/4 FQPF4N90C, Транзистор N-CH 900V 4A [TO-220F]Фото 3/4 FQPF4N90C, Транзистор N-CH 900V 4A [TO-220F]Фото 4/4 FQPF4N90C, Транзистор N-CH 900V 4A [TO-220F]
Есть в наличии более 200 шт. Отгрузка со склада в г.Москва
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45 руб. × = 45 руб.
от 20 шт. — 40 руб.
от 200 шт. — 39 руб.
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Описание

QFET® N-Channel MOSFET, up to 5A, Fairchild Semiconductor
Fairchild Semiconductor's new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Техническая документация

FQPF4N90C
pdf, 1325 КБ

Дополнительная информация

Datasheet FQPF4N90C
Datasheet FQPF4N90C
Datasheet FQPF4N90C
Trans MOSFET N-CH 900V 4A 3-Pin TO-220 FQPF4N90C