HGTG12N60A4D, Транзистор IGBT 600В 54А 167Вт [TO-247]

Артикул: HGTG12N60A4D
Ном. номер: 9000044255
Производитель: Fairchild Semiconductor
Фото 1/2 HGTG12N60A4D, Транзистор IGBT 600В 54А 167Вт [TO-247]
Фото 2/2 HGTG12N60A4D, Транзистор IGBT 600В 54А 167Вт [TO-247]
Есть в наличии более 40 шт. Отгрузка со склада в г.Москва 1 рабочий день.
Возможна срочная доставка завтра
120 × = 120
от 25 шт. — 100 руб.
от 60 шт. — 87.12 руб. (1 рабочий день)
Цена и наличие в магазинах


The HGTG12N60A4D is a 600V N-channel IGBT with anti-parallel hyper fast diode. This SMPS series is a member of the MOS gated high voltage switching IGBT family. IGBT combines the best features of MOSFET and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. Offers lower conduction loss and lower switching loss for designing high efficiency and reliable systems. Fairchild offers an extensive portfolio of IGBT devices by various process technologies from 300V to greater than 1200V. Optimized manufacturing process results in better control and repeatability of the top-side structure, resulting in tighter specifications and better EMI performance. This product is general usage and suitable for many different applications.

• 70ns at TJ = 125°C Fall time

Техническая документация

pdf, 173 КБ

Дополнительная информация

Datasheet HGTG12N60A4D
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов