IGP20N60H3, БТИЗ транзистор, 20 А, 2.4 В, 170 Вт, 600 В, TO-220, 3 вывод(-ов)

PartNumber: IGP20N60H3
Ном. номер: 8032001706
Производитель: Infineon Technologies
IGP20N60H3, БТИЗ транзистор, 20 А, 2.4 В, 170 Вт, 600 В, TO-220, 3 вывод(-ов)
Доступно на заказ 107 шт. Отгрузка со склада в г.Москва 2-3 недели.
230 руб. × = 230 руб.
от 10 шт. — 178 руб.
от 100 шт. — 132 руб.


The IGP20N60H3 is a High Speed IGBT in Trench and field-stop technology. The high speed device is used to reduce the size of the active components (25 to 70kHz). Infineon's high speed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-OFF switching behaviour, leading to low turn-OFF losses.

• Designed specifically to replace planar MOSFETs in applications switching @ frequencies below 70kHz
• Low switching losses for high efficiency
• Fast switching behaviour with low EMI emissions
• Optimized diode for target applications, meaning further improvement in switching losses
• Low gate resistor selection possible (down to 5R) whilst maintaining excellent switching behaviour
• Short-circuit capability
• Excellent performance
• Low switching and conduction losses
• Very good EMI behaviour
• Small gate resistor for reduced delay time and voltage overshoot
• Best-in-class IGBT efficiency and EMI behaviour
• Packaged with and without freewheeling diode for increased design freedom
• Green product
• Halogen-free

Полупроводники - Дискретные\Транзисторы\БТИЗ Одиночные

Технические параметры

Максимальная Рабочая Температура
175 C
Количество Выводов
Напряжение Коллектор-Эмиттер
Стиль Корпуса Транзистора
Рассеиваемая Мощность
DC Ток Коллектора
Напряжение Насыщения Коллектор-Эмиттер Vce(on)

Дополнительная информация

Datasheet IGP20N60H3