IGW25N120H3

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2 шт. со склада г.Москва, срок 4-9 дней

880 руб.

от 2 шт. — 810 руб.

Добавить в корзину 1 шт. на сумму 880 руб.

Номенклатурный номер: 8001996886

Бренд: Нет торговой марки

Электроэлемент

Trans IGBT Chip N-CH 1200V 50A 326mW 3-Pin(3+Tab) TO-247 Tube

Brand	Infineon Technologies
Collector- Emitter Voltage VCEO Max	1200 V
Collector-Emitter Saturation Voltage	2.05 V
Configuration	Single
Continuous Collector Current at 25 C	50 A
Factory Pack Quantity	240
Gate-Emitter Leakage Current	600 nA
Manufacturer	Infineon
Maximum Gate Emitter Voltage	+/-20 V
Maximum Operating Temperature	+175 C
Minimum Operating Temperature	-40 C
Mounting Style	Through Hole
Package / Case	TO-247-3
Packaging	Tube
Part # Aliases	IGW25N120H3FKSA1 IGW25N12H3XK SP000674424
Pd - Power Dissipation	326 W
Product Category	IGBT Transistors
RoHS	Details
Series	HighSpeed 3
Technology	Si
Tradename	TRENCHSTOP
Unit Weight	1.340411 oz
Channel Type	N
Maximum Collector Emitter Voltage	1200 V
Maximum Continuous Collector Current	50 A
Maximum Power Dissipation	326 W
Mounting Type	Through Hole
Package Type	TO-247
Pin Count	3
Switching Speed	1MHz
Transistor Configuration	Single
Вес, г	1