IGW50N60TFKSA1, БТИЗ транзистор, 50 А, 2 В, 333 Вт, 600 В, TO-247, 3 вывод(-ов)

PartNumber: IGW50N60TFKSA1
Ном. номер: 8001315007
Производитель: Infineon Technologies
IGW50N60TFKSA1, БТИЗ транзистор, 50 А, 2 В, 333 Вт, 600 В, TO-247, 3 вывод(-ов)
Доступно на заказ 39 шт. Отгрузка со склада в г.Москва 2-3 недели.
360 руб. × = 360 руб.
от 25 шт. — 315 руб.

Описание

The IGW50N60T is a Low Loss IGBT in TrenchStop® and field-stop technology. The TrenchStop® IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of TrenchStop®-cell and field-stop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-ON losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

• Lowest Vce (sat) drop for lower conduction losses
• Low switching losses
• Easy parallel switching capability due to positive temperature coefficient in Vce (sat)
• Very soft, fast recovery anti-parallel emitter controlled diode
• High ruggedness, temperature stable behaviour
• Low EMI emissions
• Low gate charge
• Very tight parameter distribution
• Highest efficiency - Low conduction and switching losses
• High device reliability
• 5µs Short-circuit withstand time
• Green product
• Halogen-free

Полупроводники - Дискретные\Транзисторы\БТИЗ Одиночные

Технические параметры

Максимальная Рабочая Температура
175°C
Количество Выводов
3вывод(-ов)
Напряжение Коллектор-Эмиттер
600В
Стиль Корпуса Транзистора
TO-247
Рассеиваемая Мощность
333Вт
DC Ток Коллектора
50А
Напряжение Насыщения Коллектор-Эмиттер Vce(on)

Дополнительная информация

Datasheet IGW50N60TFKSA1